TP65H070G4PS
Transphorm
型号:
TP65H070G4PS
品牌:
封装:
TO-220AB
批次:
-
数据手册:
-
描述:
GANFET N-CH 650V 29A TO220
购买数量:
递送:
付款:
库存 : 1000
最小起订量: 1 最小递增量: 1
数量
单价
总价
1
$8.2175
$8.2175
10
$7.04615
$70.4615
100
$5.87214
$587.214
500
$5.1813
$2590.65
1000
$4.66317
$4663.17
2000
$4.369563
$8739.126
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产品信息
参数信息
用户指南
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 638 pF @ 400 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 10 V |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 18A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4.7V @ 700µA |
| Supplier Device Package | TO-220AB |
| Drain to Source Voltage (Vdss) | 650 V |
| Power Dissipation (Max) | 96W (Tc) |
| Series | SuperGaN® |
| Package / Case | TO-220-3 |
| Technology | GaNFET (Gallium Nitride) |
| Mfr | Transphorm |
| Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tube |
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