TP65H050WS
detaildesc

TP65H050WS

Transphorm

型号:

TP65H050WS

品牌:

Transphorm

封装:

TO-247-3

批次:

-

数据手册:

-

描述:

GANFET N-CH 650V 34A TO247-3

购买数量:

递送:

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付款:

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库存 : 372

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $16.7865

    $16.7865

  • 10

    $14.78675

    $147.8675

  • 100

    $12.788235

    $1278.8235

  • 500

    $11.589316

    $5794.658

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 60mOhm @ 22A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.8V @ 700µA
Supplier Device Package TO-247-3
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 119W (Tc)
Series -
Package / Case TO-247-3
Technology GaNFET (Cascode Gallium Nitride FET)
Mfr Transphorm
Current - Continuous Drain (Id) @ 25°C 34A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 12V
Package Tube
Base Product Number TP65H050