TP65H050G4BS
Transphorm
库存 : 388
最小起订量: 1 最小递增量: 1
数量
单价
总价
1
$11.913
$11.913
10
$10.49085
$104.9085
100
$9.07307
$907.307
500
$8.22244
$4111.22
1000
$7.541955
$7541.955
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产品信息
参数信息
用户指南
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 400 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 22A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4.8V @ 700µA |
| Supplier Device Package | TO-263 |
| Drain to Source Voltage (Vdss) | 650 V |
| Power Dissipation (Max) | 119W (Tc) |
| Series | SuperGaN® |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Technology | GaNFET (Gallium Nitride) |
| Mfr | Transphorm |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tube |
| Base Product Number | TP65H050 |
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