TP65H035G4WSQA
detaildesc

TP65H035G4WSQA

Transphorm

型号:

TP65H035G4WSQA

品牌:

Transphorm

封装:

TO-247-3

批次:

-

数据手册:

pdf

描述:

650 V 46.5 GAN FET

购买数量:

递送:

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付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 350

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $18.354

    $18.354

  • 10

    $16.1709

    $161.709

  • 100

    $13.98571

    $1398.571

  • 500

    $12.67452

    $6337.26

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 41mOhm @ 30A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.8V @ 1mA
Supplier Device Package TO-247-3
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 187W (Tc)
Series Automotive, AEC-Q101
Package / Case TO-247-3
Technology GaNFET (Gallium Nitride)
Mfr Transphorm
Current - Continuous Drain (Id) @ 25°C 47.2A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube