TK55D10J1(Q)
Toshiba Semiconductor and Storage
型号:
TK55D10J1(Q)
封装:
TO-220(W)
批次:
-
数据手册:
描述:
MOSFET N-CH 100V 55A TO220
购买数量:
递送:
付款:
库存 : 请查询
请发送RFQ，我们将立即回复。
产品信息
参数信息
用户指南
| Operating Temperature | 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 5700 pF @ 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 27A, 10V |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA |
| Supplier Device Package | TO-220(W) |
| Drain to Source Voltage (Vdss) | 100 V |
| Power Dissipation (Max) | 140W (Tc) |
| Series | - |
| Package / Case | TO-220-3 |
| Technology | MOSFET (Metal Oxide) |
| Mfr | Toshiba Semiconductor and Storage |
| Current - Continuous Drain (Id) @ 25°C | 55A (Ta) |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Package | Tube |
| Base Product Number | TK55D10 |
