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TK40S10K3Z(T6L1,NQ
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TK40S10K3Z(T6L1,NQ

Toshiba Semiconductor and Storage

型号:

TK40S10K3Z(T6L1,NQ

封装:

DPAK+

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 100V 40A DPAK

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3110 pF @ 10 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 61 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 18mOhm @ 20A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 4V @ 1mA
Supplier Device Package DPAK+
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 93W (Tc)
Series U-MOSIV
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Mfr Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C 40A (Ta)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number TK40S10