TK18E10K3,S1X(S
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TK18E10K3,S1X(S

Toshiba Semiconductor and Storage

型号:

TK18E10K3,S1X(S

封装:

TO-220-3

批次:

-

数据手册:

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描述:

MOSFET N-CH 100V 18A TO220-3

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产品信息

参数信息

用户指南

Operating Temperature 150°C (TJ)
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 42mOhm @ 9A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id -
Supplier Device Package TO-220-3
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) -
Series U-MOSIV
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Mfr Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C 18A (Ta)
Package Tube
Base Product Number TK18E10