IV1Q12160T4
detaildesc

IV1Q12160T4

Inventchip

型号:

IV1Q12160T4

品牌:

Inventchip

封装:

TO-247-4

批次:

-

数据手册:

pdf

描述:

SIC MOSFET, 1200V 160MOHM, TO-24

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 106

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $17.1285

    $17.1285

  • 10

    $15.0879

    $150.879

  • 100

    $13.0492

    $1304.92

  • 500

    $11.825828

    $5912.914

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 885 pF @ 800 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 43 nC @ 20 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 195mOhm @ 10A, 20V
Product Status Active
Vgs(th) (Max) @ Id 2.9V @ 1.9mA
Supplier Device Package TO-247-4
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 138W (Tc)
Series -
Package / Case TO-247-4
Technology SiCFET (Silicon Carbide)
Mfr Inventchip
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Vgs (Max) +20V, -5V
Drive Voltage (Max Rds On, Min Rds On) 20V
Package Tube