IV1Q12050T3
detaildesc

IV1Q12050T3

Inventchip

型号:

IV1Q12050T3

品牌:

Inventchip

封装:

TO-247-3

批次:

-

数据手册:

pdf

描述:

SIC MOSFET, 1200V 50MOHM, TO-247

购买数量:

递送:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2770 pF @ 800 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 20 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 65mOhm @ 20A, 20V
Product Status Active
Vgs(th) (Max) @ Id 3.2V @ 6mA
Supplier Device Package TO-247-3
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 327W (Tc)
Series -
Package / Case TO-247-3
Technology SiCFET (Silicon Carbide)
Mfr Inventchip
Current - Continuous Drain (Id) @ 25°C 58A (Tc)
Vgs (Max) +20V, -5V
Drive Voltage (Max Rds On, Min Rds On) 20V
Package Tube