IRFHE4250DTRPBF
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IRFHE4250DTRPBF

Infineon Technologies

型号:

IRFHE4250DTRPBF

封装:

32-PQFN (6x6)

批次:

-

数据手册:

pdf

描述:

MOSFET 2N-CH 25V 86A/303A PQFN

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Logic Level Gate
Configuration 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds 1735pF @ 13V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 2.75mOhm @ 27A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 2.1V @ 35µA
Supplier Device Package 32-PQFN (6x6)
Drain to Source Voltage (Vdss) 25V
Series FASTIRFET™
Package / Case 32-PowerWFQFN
Technology MOSFET (Metal Oxide)
Power - Max 156W
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 86A, 303A
Package Tape & Reel (TR)
Base Product Number IRFHE4250