BSO612CVG
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BSO612CVG

Infineon Technologies

型号:

BSO612CVG

封装:

PG-DSO-8

批次:

-

数据手册:

-

描述:

BSO612 - 20V-60V COMPLEMENTARY M

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Configuration N and P-Channel
Input Capacitance (Ciss) (Max) @ Vds 340pF, 400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 15.5nC @ 10V, 16nC @ 10V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 120mOhm @ 3A, 10V, 300mOhm @ 2A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 20µA, 4V @ 450µA
Supplier Device Package PG-DSO-8
Drain to Source Voltage (Vdss) 60V
Series SIPMOS®
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Power - Max 2W (Ta)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 3A (Ta), 2A (Ta)
Package Bulk
Base Product Number BSO612