GT130N10F

Goford Semiconductor

Product No:

GT130N10F

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Package:

TO-220F

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Description:

MOSFET N-CH 100V 45A TO-220F

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1215 pF @ 50 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	12mOhm @ 20A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-220F
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	41.7W (Tc)
Series	-
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Mfr	Goford Semiconductor
Current - Continuous Drain (Id) @ 25°C	45A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube