G110N06T
Goford Semiconductor
型号:
G110N06T
封装:
TO-220
批次:
-
数据手册:
-
描述:
N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.
购买数量:
递送:
付款:
库存 : 96
最小起订量: 1 最小递增量: 1
数量
单价
总价
1
$1.52
$1.52
10
$1.24355
$12.4355
100
$0.967195
$96.7195
500
$0.819793
$409.8965
1000
$0.667812
$667.812
2000
$0.628662
$1257.324
5000
$0.598728
$2993.64
10000
$0.571092
$5710.92
请发送询价，我们将立即回复。
产品信息
参数信息
用户指南
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 5538 pF @ 25 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 113 nC @ 10 V |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 6.4mOhm @ 20A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drain to Source Voltage (Vdss) | 60 V |
| Power Dissipation (Max) | 120W (Tc) |
| Series | - |
| Package / Case | TO-220-3 |
| Technology | MOSFET (Metal Oxide) |
| Mfr | Goford Semiconductor |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Package | Tube |
