GT110N06D5
detaildesc

GT110N06D5

Goford Semiconductor

型号:

GT110N06D5

封装:

8-DFN (4.9x5.75)

批次:

-

数据手册:

pdf

描述:

N60V, 45A,RD<11M@10V,VTH1.0V~2.4

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

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库存 : 9996

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.8265

    $0.8265

  • 10

    $0.71725

    $7.1725

  • 100

    $0.496565

    $49.6565

  • 500

    $0.414884

    $207.442

  • 1000

    $0.353096

    $353.096

  • 2000

    $0.314478

    $628.956

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1202 pF @ 30 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 11mOhm @ 14A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.4V @ 250µA
Supplier Device Package 8-DFN (4.9x5.75)
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 69W (Tc)
Series GT
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Mfr Goford Semiconductor
Current - Continuous Drain (Id) @ 25°C 45A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)