GT1003D
detaildesc

GT1003D

Goford Semiconductor

型号:

GT1003D

封装:

SOT-23-3L

批次:

-

数据手册:

-

描述:

N100V,RD(MAX)<130M@10V,RD(MAX)<1

购买数量:

递送:

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付款:

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库存 : 4705

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.4275

    $0.4275

  • 10

    $0.2983

    $2.983

  • 100

    $0.150765

    $15.0765

  • 500

    $0.123025

    $61.5125

  • 1000

    $0.091276

    $91.276

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 212 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 5.2 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 130mOhm @ 3A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.6V @ 250µA
Supplier Device Package SOT-23-3L
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 2W
Series -
Package / Case TO-236-3, SC-59, SOT-23-3
Technology MOSFET (Metal Oxide)
Mfr Goford Semiconductor
Current - Continuous Drain (Id) @ 25°C 3A
Vgs (Max) ±20V
Package Tape & Reel (TR)