GT060N04D52
detaildesc

GT060N04D52

Goford Semiconductor

型号:

GT060N04D52

封装:

8-DFN (4.9x5.75)

批次:

-

数据手册:

pdf

描述:

DUAL N40V,62A,RD<6.5M@10V,VTH1.0

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 请查询

请发送RFQ,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Standard
Configuration 2 N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1276pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 6.5mOhm @ 30A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.3V @ 250µA
Supplier Device Package 8-DFN (4.9x5.75)
Drain to Source Voltage (Vdss) 40V
Series -
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Power - Max 20W (Tc)
Mfr Goford Semiconductor
Current - Continuous Drain (Id) @ 25°C 62A (Tc)
Package Tape & Reel (TR)