G09N06S2
Goford Semiconductor
型号:
G09N06S2
封装:
8-SOP
批次:
-
数据手册:
描述:
N+N 60V,9A,RD<18M@10V,VTH1.2V~2.
购买数量:
递送:
付款:
库存 : 请查询
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产品信息
参数信息
用户指南
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | Standard |
| Configuration | 2 N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 2180pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs | 47nC @ 10V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 9A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-SOP |
| Drain to Source Voltage (Vdss) | 60V |
| Series | - |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.6W (Tc) |
| Mfr | Goford Semiconductor |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Package | Tape & Reel (TR) |
