GT045N10D5
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GT045N10D5

Goford Semiconductor

型号:

GT045N10D5

封装:

8-DFN (4.9x5.75)

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 100V 120A DFN5*6-8L

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 4217 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 5mOhm @ 30A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package 8-DFN (4.9x5.75)
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 180W (Tc)
Series -
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Mfr Goford Semiconductor
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)