
Goford Semiconductor
型号:
GT035N06T
封装:
TO-220
批次:
-
描述:
N-CH, 60V,170A, RD(MAX)<3.5M@10V
购买数量:
递送:

付款:
最小起订量: 1 最小递增量: 1
数量
单价
总价
1
$1.843
$1.843
10
$1.5276
$15.276
100
$1.21619
$121.619
500
$1.029059
$514.5295
1000
$0.873145
$873.145
2000
$0.829492
$1658.984
5000
$0.798304
$3991.52
10000
$0.771875
$7718.75
请发送询价,我们将立即回复。
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 5064 pF @ 30 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 20A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drain to Source Voltage (Vdss) | 60 V |
| Power Dissipation (Max) | 215W (Tc) |
| Series | - |
| Package / Case | TO-220-3 |
| Technology | MOSFET (Metal Oxide) |
| Mfr | Goford Semiconductor |
| Current - Continuous Drain (Id) @ 25°C | 170A (Tc) |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Package | Tube |