GT025N06AT
Goford Semiconductor
型号:
GT025N06AT
封装:
TO-220
批次:
-
数据手册:
描述:
N60V, 170A,RD<2.5M@10V,VTH1.2V~2
购买数量:
递送:
付款:
库存 : 99
最小起订量: 1 最小递增量: 1
数量
单价
总价
1
$1.6435
$1.6435
10
$1.368
$13.68
100
$1.08889
$108.889
500
$0.921405
$460.7025
1000
$0.781802
$781.802
2000
$0.74271
$1485.42
5000
$0.71479
$3573.95
10000
$0.691125
$6911.25
请发送询价，我们将立即回复。
产品信息
参数信息
用户指南
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 4954 pF @ 30 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 20A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drain to Source Voltage (Vdss) | 60 V |
| Power Dissipation (Max) | 215W (Tc) |
| Series | - |
| Package / Case | TO-220-3 |
| Technology | MOSFET (Metal Oxide) |
| Mfr | Goford Semiconductor |
| Current - Continuous Drain (Id) @ 25°C | 170A (Tc) |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Package | Tube |
