GT025N06AM
Goford Semiconductor
型号:
GT025N06AM
封装:
TO-263
批次:
-
数据手册:
描述:
N60V,170A,RD<2.5M@10V,VTH1.2V~2.
购买数量:
递送:
付款:
库存 : 791
最小起订量: 1 最小递增量: 1
数量
单价
总价
1
$1.615
$1.615
10
$1.3433
$13.433
100
$1.069415
$106.9415
请发送询价，我们将立即回复。
产品信息
参数信息
用户指南
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 5119 pF @ 30 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 20A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-263 |
| Drain to Source Voltage (Vdss) | 60 V |
| Power Dissipation (Max) | 215W (Tc) |
| Series | - |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Technology | MOSFET (Metal Oxide) |
| Mfr | Goford Semiconductor |
| Current - Continuous Drain (Id) @ 25°C | 170A (Tc) |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Package | Tape & Reel (TR) |
