GP2T040A120H
detaildesc

GP2T040A120H

SemiQ

型号:

GP2T040A120H

品牌:

SemiQ

封装:

TO-247-4

批次:

-

数据手册:

pdf

描述:

SIC MOSFET 1200V 40M TO-247-4L

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 75

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $19.4465

    $19.4465

  • 10

    $17.12945

    $171.2945

  • 100

    $14.81468

    $1481.468

  • 500

    $13.425799

    $6712.8995

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3192 pF @ 1000 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 118 nC @ 20 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 52mOhm @ 40A, 20V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 10mA
Supplier Device Package TO-247-4
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 322W (Tc)
Series -
Package / Case TO-247-4
Technology SiCFET (Silicon Carbide)
Mfr SemiQ
Current - Continuous Drain (Id) @ 25°C 63A (Tc)
Vgs (Max) +25V, -10V
Drive Voltage (Max Rds On, Min Rds On) 20V
Package Tube