GCMX080B120S1-E1
SemiQ
型号:
GCMX080B120S1-E1
品牌:
封装:
SOT-227
批次:
-
数据手册:
描述:
SIC 1200V 80M MOSFET SOT-227
购买数量:
递送:
付款:
库存 : 35
最小起订量: 1 最小递增量: 1
数量
单价
总价
1
$21.109
$21.109
10
$18.75965
$187.5965
100
$16.40745
$1640.745
500
$14.001024
$7000.512
请发送询价，我们将立即回复。
产品信息
参数信息
用户指南
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1336 pF @ 1000 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 20 V |
| Mounting Type | Chassis Mount |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 20V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 10mA |
| Supplier Device Package | SOT-227 |
| Drain to Source Voltage (Vdss) | 1200 V |
| Power Dissipation (Max) | 142W (Tc) |
| Series | - |
| Package / Case | SOT-227-4, miniBLOC |
| Technology | SiCFET (Silicon Carbide) |
| Mfr | SemiQ |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Vgs (Max) | +25V, -10V |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Package | Tube |
| Base Product Number | GCMX080 |
