GCMX080B120S1-E1
detaildesc

GCMX080B120S1-E1

SemiQ

Product No:

GCMX080B120S1-E1

Manufacturer:

SemiQ

Package:

SOT-227

Batch:

-

Datasheet:

pdf

Description:

SIC 1200V 80M MOSFET SOT-227

Quantity:

Delivery:

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Payment:

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In Stock : 35

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $21.109

    $21.109

  • 10

    $18.75965

    $187.5965

  • 100

    $16.40745

    $1640.745

  • 500

    $14.001024

    $7000.512

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1336 pF @ 1000 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 20 V
Mounting Type Chassis Mount
Rds On (Max) @ Id, Vgs 100mOhm @ 20A, 20V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 10mA
Supplier Device Package SOT-227
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 142W (Tc)
Series -
Package / Case SOT-227-4, miniBLOC
Technology SiCFET (Silicon Carbide)
Mfr SemiQ
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Vgs (Max) +25V, -10V
Drive Voltage (Max Rds On, Min Rds On) 20V
Package Tube
Base Product Number GCMX080