G700P06T
detaildesc

G700P06T

Goford Semiconductor

型号:

G700P06T

封装:

TO-220

批次:

-

数据手册:

pdf

描述:

P-60V,25A,RD<70M@-10V,VTH1V~-2.5

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 34

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.646

    $0.646

  • 10

    $0.56145

    $5.6145

  • 100

    $0.38855

    $38.855

  • 500

    $0.324691

    $162.3455

  • 1000

    $0.276336

    $276.336

  • 2000

    $0.246116

    $492.232

  • 5000

    $0.233158

    $1165.79

  • 10000

    $0.215888

    $2158.88

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1428 pF @ 30 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 70mOhm @ 4A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package TO-220
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 100W (Tc)
Series -
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Mfr Goford Semiconductor
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tube