G6N02L
detaildesc

G6N02L

Goford Semiconductor

型号:

G6N02L

封装:

SOT-23-3

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 20V 6A SOT-23-3L

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

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库存 : 4520

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.3895

    $0.3895

  • 10

    $0.2755

    $2.755

  • 100

    $0.13908

    $13.908

  • 500

    $0.123291

    $61.6455

  • 1000

    $0.09595

    $95.95

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Standard
Input Capacitance (Ciss) (Max) @ Vds 1140 pF @ 10 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 12.5 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 11.3mOhm @ 3A, 4.5V
Product Status Active
Vgs(th) (Max) @ Id 900mV @ 250µA
Supplier Device Package SOT-23-3
Drain to Source Voltage (Vdss) 20 V
Power Dissipation (Max) 1.8W (Tc)
Series -
Package / Case TO-236-3, SC-59, SOT-23-3
Technology MOSFET (Metal Oxide)
Mfr Goford Semiconductor
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Vgs (Max) ±12V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Package Tape & Reel (TR)