G5S6506Z
Global Power Technology-GPT
型号:
G5S6506Z
封装:
8-DFN (4.9x5.75)
批次:
-
数据手册:
描述:
DIODE SIL CARB 650V 30.5A 8DFN
购买数量:
递送:
付款:
库存 : 请查询
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产品信息
参数信息
用户指南
| Speed | No Recovery Time > 500mA (Io) |
| Capacitance @ Vr, F | 395pF @ 0V, 1MHz |
| Reverse Recovery Time (trr) | 0 ns |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Supplier Device Package | 8-DFN (4.9x5.75) |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
| Series | - |
| Package / Case | 8-PowerTDFN |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 6 A |
| Mfr | Global Power Technology-GPT |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Package | Cut Tape (CT) |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Current - Average Rectified (Io) | 30.5A |
