G3S12010H
Global Power Technology-GPT
型号:
G3S12010H
封装:
TO-220F
批次:
-
数据手册:
描述:
DIODE SIC 1.2KV 16.5A TO220F
购买数量:
递送:
付款:
库存 : 请查询
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产品信息
参数信息
用户指南
| Speed | No Recovery Time > 500mA (Io) |
| Capacitance @ Vr, F | 765pF @ 0V, 1MHz |
| Reverse Recovery Time (trr) | 0 ns |
| Mounting Type | Through Hole |
| Product Status | Active |
| Supplier Device Package | TO-220F |
| Current - Reverse Leakage @ Vr | 50 µA @ 1200 V |
| Series | - |
| Package / Case | TO-220-2 Full Pack |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Mfr | Global Power Technology-GPT |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Package | Cut Tape (CT) |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Current - Average Rectified (Io) | 16.5A |
