G58N06F
Goford Semiconductor
型号:
G58N06F
封装:
TO-220F
批次:
-
数据手册:
描述:
N60V, 35A,RD<13M@10V,VTH1.0V~2.4
购买数量:
递送:
付款:
库存 : 75
最小起订量: 1 最小递增量: 1
数量
单价
总价
1
$0.9215
$0.9215
10
$0.75145
$7.5145
100
$0.584345
$58.4345
500
$0.495292
$247.646
1000
$0.403465
$403.465
2000
$0.37982
$759.64
5000
$0.361732
$1808.66
10000
$0.34504
$3450.4
请发送询价，我们将立即回复。
产品信息
参数信息
用户指南
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 30006 pF @ 30 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 30A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | TO-220F |
| Drain to Source Voltage (Vdss) | 60 V |
| Power Dissipation (Max) | 44W (Tc) |
| Series | G |
| Package / Case | TO-220-3 Full Pack |
| Technology | MOSFET (Metal Oxide) |
| Mfr | Goford Semiconductor |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Package | Tube |
