G400P06T
detaildesc

G400P06T

Goford Semiconductor

型号:

G400P06T

封装:

TO-220

批次:

-

数据手册:

pdf

描述:

P-60V,-32A,RD(MAX)<40M@-10V,VTH-

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 126

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.8265

    $0.8265

  • 10

    $0.71725

    $7.1725

  • 100

    $0.496565

    $49.6565

  • 500

    $0.414884

    $207.442

  • 1000

    $0.353096

    $353.096

  • 2000

    $0.314478

    $628.956

  • 5000

    $0.29792

    $1489.6

  • 10000

    $0.275861

    $2758.61

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2598 pF @ 30 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 40mOhm @ 12A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Supplier Device Package TO-220
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 110W (Tc)
Series G
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Mfr Goford Semiconductor
Current - Continuous Drain (Id) @ 25°C 32A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube