G350P02LLE
detaildesc

G350P02LLE

Goford Semiconductor

型号:

G350P02LLE

封装:

SOT-23-6L

批次:

-

数据手册:

-

描述:

P-20V,-8.2A,RD(MAX)<8.5M@-4.5V,V

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 3000

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.38

    $0.38

  • 10

    $0.26695

    $2.6695

  • 100

    $0.1349

    $13.49

  • 500

    $0.110048

    $55.024

  • 1000

    $0.081652

    $81.652

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1126 pF @ 10 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 17.2 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 35mOhm @ 4A, 4.5V
Product Status Active
Vgs(th) (Max) @ Id 1V @ 250µA
Supplier Device Package SOT-23-6L
Drain to Source Voltage (Vdss) 20 V
Power Dissipation (Max) 1.4W (Tc)
Series -
Package / Case SOT-23-6
Technology MOSFET (Metal Oxide)
Mfr Goford Semiconductor
Current - Continuous Drain (Id) @ 25°C 4.5A (Tc)
Vgs (Max) ±10V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Package Tape & Reel (TR)