G3035
detaildesc

G3035

Goford Semiconductor

型号:

G3035

封装:

SOT-23

批次:

-

数据手册:

pdf

描述:

P30V,RD(MAX)<59M@-10V,RD(MAX)<75

购买数量:

递送:

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付款:

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库存 : 12209

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.4085

    $0.4085

  • 10

    $0.2888

    $2.888

  • 100

    $0.145825

    $14.5825

  • 500

    $0.118978

    $59.489

  • 1000

    $0.088274

    $88.274

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 15 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 59mOhm @ 4A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2V @ 250µA
Supplier Device Package SOT-23
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 1.4W (Tc)
Series -
Package / Case TO-236-3, SC-59, SOT-23-3
Technology MOSFET (Metal Oxide)
Mfr Goford Semiconductor
Current - Continuous Drain (Id) @ 25°C 4.6A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)