G1K1P06HH
detaildesc

G1K1P06HH

Goford Semiconductor

型号:

G1K1P06HH

封装:

SOT-223

批次:

-

数据手册:

-

描述:

P-60V,-4.5A,RD(MAX)<110M@-10V,VT

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

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库存 : 4760

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.3325

    $0.3325

  • 10

    $0.25935

    $2.5935

  • 100

    $0.15542

    $15.542

  • 500

    $0.143925

    $71.9625

  • 1000

    $0.097869

    $97.869

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 981 pF @ 30 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 110mOhm @ 4A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package SOT-223
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 3.1W (Tc)
Series -
Package / Case TO-261-4, TO-261AA
Technology MOSFET (Metal Oxide)
Mfr Goford Semiconductor
Current - Continuous Drain (Id) @ 25°C 4.5A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)