G12P03D3
detaildesc

G12P03D3

Goford Semiconductor

型号:

G12P03D3

封装:

8-DFN (3.15x3.05)

批次:

-

数据手册:

pdf

描述:

P30V,RD(MAX)<20M@-10V,RD(MAX)<26

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 7557

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.57

    $0.57

  • 10

    $0.4883

    $4.883

  • 100

    $0.339245

    $33.9245

  • 500

    $0.264898

    $132.449

  • 1000

    $0.215308

    $215.308

  • 2000

    $0.19248

    $384.96

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1253 pF @ 15 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 24.5 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 20mOhm @ 6A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2V @ 250µA
Supplier Device Package 8-DFN (3.15x3.05)
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 3W (Tc)
Series -
Package / Case 8-PowerVDFN
Technology MOSFET (Metal Oxide)
Mfr Goford Semiconductor
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)