G110N06K
detaildesc

G110N06K

Goford Semiconductor

型号:

G110N06K

封装:

TO-252

批次:

-

数据手册:

-

描述:

N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 12428

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $1.33

    $1.33

  • 10

    $1.08775

    $10.8775

  • 100

    $0.84626

    $84.626

  • 500

    $0.717326

    $358.663

  • 1000

    $0.584336

    $584.336

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 5538 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 113 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 6.4mOhm @ 4A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package TO-252
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 160W (Tc)
Series -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Mfr Goford Semiconductor
Current - Continuous Drain (Id) @ 25°C 110A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)