
Goford Semiconductor
型号:
G110N06K
封装:
TO-252
批次:
-
数据手册:
-
描述:
N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.
购买数量:
递送:

付款:
最小起订量: 1 最小递增量: 1
数量
单价
总价
1
$1.33
$1.33
10
$1.08775
$10.8775
100
$0.84626
$84.626
500
$0.717326
$358.663
1000
$0.584336
$584.336
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| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 5538 pF @ 25 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 113 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 6.4mOhm @ 4A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-252 |
| Drain to Source Voltage (Vdss) | 60 V |
| Power Dissipation (Max) | 160W (Tc) |
| Series | - |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Technology | MOSFET (Metal Oxide) |
| Mfr | Goford Semiconductor |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Package | Tape & Reel (TR) |