G08N06S
detaildesc

G08N06S

Goford Semiconductor

型号:

G08N06S

封装:

8-SOP

批次:

-

数据手册:

-

描述:

N60V, RD(MAX)<30M@10V,RD(MAX)<40

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 7870

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.437

    $0.437

  • 10

    $0.37715

    $3.7715

  • 100

    $0.261915

    $26.1915

  • 500

    $0.204516

    $102.258

  • 1000

    $0.166231

    $166.231

  • 2000

    $0.148608

    $297.216

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 979 pF @ 30 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 30mOhm @ 3A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package 8-SOP
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 2W (Ta)
Series G
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Mfr Goford Semiconductor
Current - Continuous Drain (Id) @ 25°C 6A (Ta)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)