G085P02TS
detaildesc

G085P02TS

Goford Semiconductor

型号:

G085P02TS

封装:

8-TSSOP

批次:

-

数据手册:

pdf

描述:

P-20V,-8.2A,RD(MAX)<8.5M@-4.5V,V

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

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库存 : 5000

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.5415

    $0.5415

  • 10

    $0.4674

    $4.674

  • 100

    $0.323855

    $32.3855

  • 500

    $0.270579

    $135.2895

  • 1000

    $0.23028

    $230.28

  • 2000

    $0.205096

    $410.192

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1255 pF @ 10 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 8.5mOhm @ 4.2A, 4.5V
Product Status Active
Vgs(th) (Max) @ Id 900mV @ 250µA
Supplier Device Package 8-TSSOP
Drain to Source Voltage (Vdss) 20 V
Power Dissipation (Max) 1.05W (Tc)
Series -
Package / Case 8-TSSOP (0.173", 4.40mm Width)
Technology MOSFET (Metal Oxide)
Mfr Goford Semiconductor
Current - Continuous Drain (Id) @ 25°C 8.2A (Tc)
Vgs (Max) ±8V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Package Tape & Reel (TR)