G06N10
detaildesc

G06N10

Goford Semiconductor

型号:

G06N10

封装:

TO-252 (DPAK)

批次:

-

数据手册:

-

描述:

N100V,RD(MAX)<240M@10V,VTH1.2V~3

购买数量:

递送:

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付款:

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库存 : 7265

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.437

    $0.437

  • 10

    $0.37335

    $3.7335

  • 100

    $0.259445

    $25.9445

  • 500

    $0.202578

    $101.289

  • 1000

    $0.164654

    $164.654

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 190 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 6.2 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 240mOhm @ 6A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Supplier Device Package TO-252 (DPAK)
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 25W
Series -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Mfr Goford Semiconductor
Current - Continuous Drain (Id) @ 25°C 6A
Vgs (Max) ±20V
Package Tape & Reel (TR)