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DF11MR12W1M1B11BOMA1
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DF11MR12W1M1B11BOMA1

Infineon Technologies

型号:

DF11MR12W1M1B11BOMA1

封装:

AG-EASY1BM-2

批次:

-

数据手册:

pdf

描述:

MOSFET MODULE 1200V 50A

购买数量:

递送:

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付款:

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产品信息

参数信息

用户指南

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
Configuration 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds 3950pF @ 800V
Gate Charge (Qg) (Max) @ Vgs 125nC @ 5V
Mounting Type Chassis Mount
Rds On (Max) @ Id, Vgs 23mOhm @ 50A, 15V
Product Status Obsolete
Vgs(th) (Max) @ Id 5.5V @ 20mA
Supplier Device Package AG-EASY1BM-2
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Series -
Package / Case Module
Technology Silicon Carbide (SiC)
Power - Max -
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 50A
Package Tray
Base Product Number DF11MR12