BSD223P
detaildesc

BSD223P

Infineon Technologies

型号:

BSD223P

封装:

PG-SOT363-PO

批次:

-

数据手册:

pdf

描述:

MOSFET 2P-CH 20V 0.39A SOT363

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 请查询

请发送RFQ,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Logic Level Gate
Configuration 2 P-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds 56pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 0.62nC @ 4.5V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.2Ohm @ 390mA, 4.5V
Product Status Obsolete
Vgs(th) (Max) @ Id 1.2V @ 1.5µA
Supplier Device Package PG-SOT363-PO
Drain to Source Voltage (Vdss) 20V
Series OptiMOS™
Package / Case 6-VSSOP, SC-88, SOT-363
Technology MOSFET (Metal Oxide)
Power - Max 250mW
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 390mA
Package Tape & Reel (TR)
Base Product Number BSD223