60N06
detaildesc

60N06

Goford Semiconductor

型号:

60N06

封装:

TO-252 (DPAK)

批次:

-

数据手册:

-

描述:

N60V,RD(MAX)<17M@10V,RD(MAX)<21M

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

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库存 : 3138

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.684

    $0.684

  • 10

    $0.5928

    $5.928

  • 100

    $0.41021

    $41.021

  • 500

    $0.342741

    $171.3705

  • 1000

    $0.291688

    $291.688

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 2050 pF @ 30 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 17mOhm @ 5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2V @ 250µA
Supplier Device Package TO-252 (DPAK)
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 85W
Series -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Mfr Goford Semiconductor
Current - Continuous Drain (Id) @ 25°C 50A
Vgs (Max) ±20V
Package Tape & Reel (TR)