2SJ668(TE16L1,NQ)
Toshiba Semiconductor and Storage
型号:
2SJ668(TE16L1,NQ)
封装:
PW-MOLD
批次:
-
数据手册:
描述:
MOSFET P-CHANNEL 60V 5A PW-MOLD
购买数量:
递送:
付款:
库存 : 请查询
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产品信息
参数信息
用户指南
| Operating Temperature | 150°C |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 10 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 2.5A, 10V |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | PW-MOLD |
| Drain to Source Voltage (Vdss) | 60 V |
| Power Dissipation (Max) | 20W (Tc) |
| Series | U-MOSIII |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Technology | MOSFET (Metal Oxide) |
| Mfr | Toshiba Semiconductor and Storage |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Package | Tape & Reel (TR) |
| Base Product Number | 2SJ668 |
