2SJ360(TE12L,F)
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2SJ360(TE12L,F)

Toshiba Semiconductor and Storage

型号:

2SJ360(TE12L,F)

封装:

PW-MINI

批次:

-

数据手册:

pdf

描述:

MOSFET P-CH 60V 1A PW-MINI

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 155 pF @ 10 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 6.5 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 730mOhm @ 500mA, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 2V @ 1mA
Supplier Device Package PW-MINI
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 500mW (Ta)
Series -
Package / Case TO-243AA
Technology MOSFET (Metal Oxide)
Mfr Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C 1A (Ta)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Package Tape & Reel (TR)
Base Product Number 2SJ360