25P06
detaildesc

25P06

Goford Semiconductor

型号:

25P06

封装:

TO-252

批次:

-

数据手册:

-

描述:

P60V,RD(MAX)<45M@-10V,VTH2V~3V T

购买数量:

递送:

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付款:

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库存 : 4417

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.7885

    $0.7885

  • 10

    $0.6479

    $6.479

  • 100

    $0.50369

    $50.369

  • 500

    $0.426968

    $213.484

  • 1000

    $0.347814

    $347.814

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3384 pF @ 30 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 37 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 45mOhm @ 12A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Supplier Device Package TO-252
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 100W (Tc)
Series -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Mfr Goford Semiconductor
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)