WNSC04650T6J
WeEn Semiconductors
型号:
WNSC04650T6J
封装:
5-DFN (8x8)
批次:
-
数据手册:
描述:
DIODE SIL CARBIDE 650V 4A 5DFN
购买数量:
递送:
付款:
库存 : 请查询
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产品信息
参数信息
用户指南
| Speed | No Recovery Time > 500mA (Io) |
| Capacitance @ Vr, F | 141pF @ 1V, 1MHz |
| Reverse Recovery Time (trr) | 0 ns |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Supplier Device Package | 5-DFN (8x8) |
| Current - Reverse Leakage @ Vr | 25 µA @ 650 V |
| Series | - |
| Package / Case | 4-VSFN Exposed Pad |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 4 A |
| Mfr | WeEn Semiconductors |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Package | Tape & Reel (TR) |
| Operating Temperature - Junction | 175°C (Max) |
| Current - Average Rectified (Io) | 4A |
| Base Product Number | WNSC0 |
