VS-3C12ET07T-M3
Vishay General Semiconductor - Diodes Division
型号:
VS-3C12ET07T-M3
封装:
TO-220AC
批次:
-
数据手册:
描述:
650 V POWER SIC GEN 3 MERGED PIN
购买数量:
递送:
付款:
库存 : 3050
最小起订量: 1 最小递增量: 1
数量
单价
总价
1
$5.377
$5.377
10
$4.5106
$45.106
100
$3.64933
$364.933
500
$3.24387
$1621.935
1000
$2.777572
$2777.572
2000
$2.615378
$5230.756
请发送询价，我们将立即回复。
产品信息
参数信息
用户指南
| Speed | No Recovery Time > 500mA (Io) |
| Capacitance @ Vr, F | 535pF @ 1V, 1MHz |
| Reverse Recovery Time (trr) | 0 ns |
| Mounting Type | Through Hole |
| Product Status | Active |
| Supplier Device Package | TO-220AC |
| Current - Reverse Leakage @ Vr | 65 µA @ 650 V |
| Series | - |
| Package / Case | TO-220-2 |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 12 A |
| Mfr | Vishay General Semiconductor - Diodes Division |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Package | Tube |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Current - Average Rectified (Io) | 12A |
| Base Product Number | VS-3C12 |
