VS-3C10ET07T-M3
Vishay General Semiconductor - Diodes Division
型号:
VS-3C10ET07T-M3
封装:
TO-220AC
批次:
-
数据手册:
描述:
650 V POWER SIC GEN 3 MERGED PIN
购买数量:
递送:
付款:
库存 : 3047
最小起订量: 1 最小递增量: 1
数量
单价
总价
1
$4.408
$4.408
10
$3.70405
$37.0405
100
$2.99649
$299.649
500
$2.663572
$1331.786
1000
$2.280684
$2280.684
2000
$2.147504
$4295.008
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产品信息
参数信息
用户指南
| Speed | No Recovery Time > 500mA (Io) |
| Capacitance @ Vr, F | 445pF @ 1V, 1MHz |
| Reverse Recovery Time (trr) | 0 ns |
| Mounting Type | Through Hole |
| Product Status | Active |
| Supplier Device Package | TO-220AC |
| Current - Reverse Leakage @ Vr | 55 µA @ 650 V |
| Series | - |
| Package / Case | TO-220-2 |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 10 A |
| Mfr | Vishay General Semiconductor - Diodes Division |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Package | Tube |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Current - Average Rectified (Io) | 10A |
| Base Product Number | VS-3C10 |
