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VS-3C08ET07S2L-M3
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VS-3C08ET07S2L-M3

Vishay General Semiconductor - Diodes Division

型号:

VS-3C08ET07S2L-M3

封装:

TO-263AB (D²PAK)

批次:

-

数据手册:

pdf

描述:

650 V POWER SIC GEN 3 MERGED PIN

购买数量:

递送:

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付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 2430

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $3.781

    $3.781

  • 10

    $3.1749

    $31.749

  • 100

    $2.56823

    $256.823

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Speed No Recovery Time > 500mA (Io)
Capacitance @ Vr, F 340pF @ 1V, 1MHz
Reverse Recovery Time (trr) 0 ns
Mounting Type Surface Mount
Product Status Active
Supplier Device Package TO-263AB (D²PAK)
Current - Reverse Leakage @ Vr 45 µA @ 650 V
Series -
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 8 A
Mfr Vishay General Semiconductor - Diodes Division
Voltage - DC Reverse (Vr) (Max) 650 V
Package Tape & Reel (TR)
Operating Temperature - Junction -55°C ~ 175°C
Current - Average Rectified (Io) 8A