VS-20ETF12S-M3
Vishay General Semiconductor - Diodes Division
型号:
VS-20ETF12S-M3
封装:
TO-263AB (D²PAK)
批次:
-
数据手册:
描述:
DIODE GEN PURP 1.2KV 20A TO263AB
购买数量:
递送:
付款:
库存 : 4000
最小起订量: 1 最小递增量: 1
数量
单价
总价
1
$2.7075
$2.7075
10
$2.2496
$22.496
100
$1.79056
$179.056
500
$1.515098
$757.549
1000
$1.28554
$1285.54
2000
$1.221263
$2442.526
5000
$1.17535
$5876.75
请发送询价，我们将立即回复。
产品信息
参数信息
用户指南
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Capacitance @ Vr, F | - |
| Reverse Recovery Time (trr) | 400 ns |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Supplier Device Package | TO-263AB (D²PAK) |
| Current - Reverse Leakage @ Vr | 100 µA @ 1200 V |
| Series | - |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Technology | Standard |
| Voltage - Forward (Vf) (Max) @ If | 1.31 V @ 20 A |
| Mfr | Vishay General Semiconductor - Diodes Division |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Package | Tube |
| Operating Temperature - Junction | -40°C ~ 150°C |
| Current - Average Rectified (Io) | 20A |
| Base Product Number | 20ETF12 |
