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VS-10ETF12THM3
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VS-10ETF12THM3

Vishay General Semiconductor - Diodes Division

型号:

VS-10ETF12THM3

封装:

TO-220AC

批次:

-

数据手册:

pdf

描述:

DIODE GEN PURP 1.2KV 10A TO220AC

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 424

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $1.6055

    $1.6055

  • 10

    $1.33285

    $13.3285

  • 100

    $1.060865

    $106.0865

  • 500

    $0.897655

    $448.8275

  • 1000

    $0.761653

    $761.653

  • 2000

    $0.723568

    $1447.136

  • 5000

    $0.696369

    $3481.845

  • 10000

    $0.673312

    $6733.12

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Speed Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F -
Reverse Recovery Time (trr) 310 ns
Mounting Type Through Hole
Product Status Active
Supplier Device Package TO-220AC
Current - Reverse Leakage @ Vr 100 µA @ 1200 V
Series Automotive, AEC-Q101
Package / Case TO-220-2
Technology Standard
Voltage - Forward (Vf) (Max) @ If 1.33 V @ 10 A
Mfr Vishay General Semiconductor - Diodes Division
Voltage - DC Reverse (Vr) (Max) 1200 V
Package Tube
Operating Temperature - Junction -40°C ~ 150°C
Current - Average Rectified (Io) 10A
Base Product Number 10ETF12