VQ1006P-E3
detaildesc

VQ1006P-E3

Vishay Siliconix

型号:

VQ1006P-E3

封装:

14-DIP

批次:

-

数据手册:

pdf

描述:

MOSFET 4N-CH 90V 0.4A 14DIP

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Logic Level Gate
Configuration 4 N-Channel
Input Capacitance (Ciss) (Max) @ Vds 60pF @ 25V
Gate Charge (Qg) (Max) @ Vgs -
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 4.5Ohm @ 1A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 2.5V @ 1mA
Supplier Device Package 14-DIP
Drain to Source Voltage (Vdss) 90V
Series -
Package / Case -
Technology MOSFET (Metal Oxide)
Power - Max 2W
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 400mA
Package Tube
Base Product Number VQ1006